SI3585DV-T1-E3

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SI3585DV-T1-E3

MOSFET N/P-CH 20V 2A/1.5A 6TSOP

part Number：

SI3585DV-T1-E3

Alternative Model：

SI3585CDV-T1-GE3

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET N/P-CH 20V 2A/1.5A 6TSOP

RoHS：

YES

：

SI3585DV-T1-E3 SI3585DV-T1-E3

SI3585DV-T1-E3 specifications

Mounting Type：

Surface Mount

Package / Case：

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package：

6-TSOP

Technology：

MOSFET (Metal Oxide)

Configuration：

N and P-Channel

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)：

20V

Rds On (Max) @ Id, Vgs：

125mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id：

600mV @ 250µA (Min)

Power - Max：

830mW

Gate Charge (Qg) (Max) @ Vgs：

3.2nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C：

2A, 1.5A

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Standard Pack Quantity：1600

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