SI3552DV-T1-E3

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SI3552DV-T1-E3

MOSFET N/P-CH 30V 2.5A 6TSOP

part Number：

SI3552DV-T1-E3

Alternative Model：

NTGD4167CT1G , T59EE477M016C0025 , OPA182IDBVR , LT1818CS5#TRMPBF , XF2M-2615-1A , SI3590DV-T1-GE3 , LM358PT , GL41Y-E3/96 , SN74LVC1G17DBVR , FDC6333C , DMG6601LVT-7 , FAN5646UC00X , ATSHA204A-SSHDA-T , AP3012KTR-G1 , TPSM63610RDFR

manufacturer：

Vishay / Siliconix

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET N/P-CH 30V 2.5A 6TSOP

RoHS：

YES

：

SI3552DV-T1-E3 SI3552DV-T1-E3

SI3552DV-T1-E3 specifications

Mounting Type：

Surface Mount

Package / Case：

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package：

6-TSOP

Technology：

MOSFET (Metal Oxide)

Configuration：

N and P-Channel

FET Feature：

Logic Level Gate

Drain to Source Voltage (Vdss)：

30V

Vgs(th) (Max) @ Id：

1V @ 250µA (Min)

Operating Temperature：

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C：

2.5A

Rds On (Max) @ Id, Vgs：

105mOhm @ 2.5A, 10V

Gate Charge (Qg) (Max) @ Vgs：

3.2nC @ 5V

Power - Max：

1.15W

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：11125

quantity

unit price

International prices

3000

0.29

870

6000

0.26

1560

9000

0.24

2160

30000

0.24

7200

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