SI3499DV-T1-E3
MOSFET P-CH 8V 5.3A 6TSOP
part Number：
SI3499DV-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 8V 5.3A 6TSOP
RoHS：
YES
SI3499DV-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：
6-TSOP
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Drain to Source Voltage (Vdss)：
8 V
Power Dissipation (Max)：
1.1W (Ta)
Vgs (Max)：
±5V
Gate Charge (Qg) (Max) @ Vgs：
42 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C：
5.3A (Ta)
Rds On (Max) @ Id, Vgs：
23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：
750mV @ 250µA
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Quick inquiry
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Standard Pack Quantity：1600
quantity
unit price
International prices
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