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SI3493BDV-T1-E3
MOSFET P-CH 20V 8A 6TSOP
part Number：
SI3493BDV-T1-E3
Alternative Model：
1.14.002.111/0000  ,  BLM18KG121TN1D  ,  FT232RL-REEL  ,  PMN16XNEX  ,  SI3493BDV-T1-GE3  ,  SI7322DN-T1-GE3  ,  PMN30XPX  ,  LP2992AIM5-1.8/NOPB  ,  BLM18AG601SN1D  ,  NCV4264-2ST50T3G  ,  SI3493DDV-T1-GE3  ,  AP7361-33FGE-7  ,  MMBT2222ALT1G  ,  SI3407DV-T1-GE3  ,  PMEG3050EP  ,  115
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET P-CH 20V 8A 6TSOP
RoHS：
YES
：
SI3493BDV-T1-E3     SI3493BDV-T1-E3    
SI3493BDV-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：
6-TSOP
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Vgs(th) (Max) @ Id：
900mV @ 250µA
Current - Continuous Drain (Id) @ 25°C：
8A (Tc)
Rds On (Max) @ Id, Vgs：
27.5mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds：
1805 pF @ 10 V
Power Dissipation (Max)：
2.08W (Ta), 2.97W (Tc)
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Manufacturer's standard delivery time：be pending
Standard Pack Quantity：46856
quantity
unit price
International prices
3000
0.39
1170
6000
0.36
2160
9000
0.34
3060
30000
0.34
10200
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