SI3475DV-T1-E3
MOSFET P-CH 200V 950MA 6TSOP
part Number：
SI3475DV-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 200V 950MA 6TSOP
RoHS：
YES
SI3475DV-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：
6-TSOP
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
18 nC @ 10 V
Drain to Source Voltage (Vdss)：
200 V
Current - Continuous Drain (Id) @ 25°C：
950mA (Tc)
Rds On (Max) @ Id, Vgs：
1.61Ohm @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：
500 pF @ 50 V
Power Dissipation (Max)：
2W (Ta), 3.2W (Tc)
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Quick inquiry
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Standard Pack Quantity：1600
quantity
unit price
International prices
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