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SI3460BDV-T1-E3
MOSFET N-CH 20V 8A 6TSOP
part Number：
SI3460BDV-T1-E3
Alternative Model：
744235101  ,  DMN1260UFA-7B  ,  SI3460DDV-T1-GE3  ,  IRLMS2002TRPBF  ,  BLM15AX102SN1D  ,  FDC637BNZ  ,  VLMO20J2M1-GS08  ,  SI3464DV-T1-BE3  ,  SI3460BDV-T1-GE3  ,  FT230XQ-R  ,  SQ3460EV-T1_GE3  ,  RQ6E085BNTCR
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 20V 8A 6TSOP
RoHS：
YES
：
SI3460BDV-T1-E3     SI3460BDV-T1-E3     SI3460BDV-T1-E3    
SI3460BDV-T1-E3 specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：
6-TSOP
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Vgs(th) (Max) @ Id：
1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C：
8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：
24 nC @ 8 V
Rds On (Max) @ Id, Vgs：
27mOhm @ 5.1A, 4.5V
Power Dissipation (Max)：
2W (Ta), 3.5W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：6511
quantity
unit price
International prices
3000
0.36
1080
6000
0.34
2040
9000
0.32
2880
30000
0.32
9600
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