SI1058X-T1-E3
MOSFET N-CH 20V 1.3A SC89-6
part Number：
SI1058X-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 20V 1.3A SC89-6
RoHS：
YES
SI1058X-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)：
2.5V, 4.5V
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Package / Case：
SOT-563, SOT-666
Input Capacitance (Ciss) (Max) @ Vds：
380 pF @ 10 V
Power Dissipation (Max)：
236mW (Ta)
Supplier Device Package：
SC-89 (SOT-563F)
Current - Continuous Drain (Id) @ 25°C：
1.3A (Ta)
Vgs(th) (Max) @ Id：
1.55V @ 250µA
Rds On (Max) @ Id, Vgs：
91mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
5.9 nC @ 5 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.22
660
6000
0.21
1260
9000
0.2
1800
30000
0.19
5700
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