MII200-12A4
IGBT MOD 1200V 270A 1130W Y3DCB
part Number：
MII200-12A4
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
IGBT Modules >
describe：
IGBT MOD 1200V 270A 1130W Y3DCB
RoHS：
YES
MII200-12A4 specifications
Mounting Type：
Chassis Mount
Operating Temperature：
150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)：
1200 V
Input：
Standard
NTC Thermistor：
No
IGBT Type：
NPT
Configuration：
Half Bridge
Input Capacitance (Cies) @ Vce：
11 nF @ 25 V
Package / Case：
Y3-DCB
Supplier Device Package：
Y3-DCB
Power - Max：
1130 W
Vce(on) (Max) @ Vge, Ic：
2.7V @ 15V, 150A
Current - Collector (Ic) (Max)：
270 A
Current - Collector Cutoff (Max)：
10 mA
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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