IXTU1R4N60P
MOSFET N-CH 600V 1.4A TO251
part Number：
IXTU1R4N60P
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 1.4A TO251
RoHS：
NO
IXTU1R4N60P specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Power Dissipation (Max)：
50W (Tc)
Drain to Source Voltage (Vdss)：
600 V
Package / Case：
TO-251-3 Short Leads, IPAK, TO-251AA
Current - Continuous Drain (Id) @ 25°C：
1.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
140 pF @ 25 V
Supplier Device Package：
TO-251AA
Gate Charge (Qg) (Max) @ Vgs：
5.2 nC @ 10 V
Vgs(th) (Max) @ Id：
5.5V @ 25µA
Rds On (Max) @ Id, Vgs：
9Ohm @ 700mA, 10V
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Standard Pack Quantity：1600
quantity
unit price
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