IXTT10N100D
MOSFET N-CH 1000V 10A TO268
part Number：
IXTT10N100D
Alternative Model：
IXTT16N50D2
manufacturer：
Wickmann / Littelfuse
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 1000V 10A TO268
RoHS：
YES
IXTT10N100D specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
1000 V
Power Dissipation (Max)：
400W (Tc)
Vgs(th) (Max) @ Id：
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
130 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
10A (Tc)
FET Feature：
Depletion Mode
Package / Case：
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：
TO-268AA
Input Capacitance (Ciss) (Max) @ Vds：
2500 pF @ 25 V
Rds On (Max) @ Id, Vgs：
1.4Ohm @ 10A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
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