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IXTQ170N10P
MOSFET N-CH 100V 170A TO3P
part Number：
IXTQ170N10P
Alternative Model：
GSGA6R015  ,  NLVVHC1G08DFT2G  ,  LT4363HDE-2#PBF  ,  SZMMSZ4689T1G  ,  IXTA36N30P  ,  IXTK170N10P  ,  IXFK170N10P  ,  IXFA180N10T2  ,  LTC4366HTS8-1#TRMPBF  ,  IXFK360N15T2  ,  SZMMSZ10T1G  ,  SZMMSZ15T1G  ,  BLM31PG330SH1L  ,  LTC2855HDE#PBF  ,  IXFH88N30P
manufacturer：
Wickmann / Littelfuse
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 170A TO3P
RoHS：
YES
：
IXTQ170N10P     IXTQ170N10P    
IXTQ170N10P specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
5V @ 250µA
Supplier Device Package：
TO-3P
Package / Case：
TO-3P-3, SC-65-3
Current - Continuous Drain (Id) @ 25°C：
170A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
198 nC @ 10 V
Power Dissipation (Max)：
715W (Tc)
Rds On (Max) @ Id, Vgs：
9mOhm @ 500mA, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1
13.19
13.19
30
10.53
315.9
120
9.42
1130.4
510
8.32
4243.2
1020
7.48
7629.6
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