IXTA180N10T7
MOSFET N-CH 100V 180A TO263-7
part Number:
IXTA180N10T7
Alternative Model:
IXTA180N10T7-TRL  ,  IXTA180N10T
manufacturer:
Littelfuse / IXYS RF
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 180A TO263-7
RoHS:
YES
IXTA180N10T7 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 175°C (TJ)
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
480W (Tc)
Supplier Device Package:
TO-263-7 (IXTA)
Gate Charge (Qg) (Max) @ Vgs:
151 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 25A, 10V
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Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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