IXTA06N120P
MOSFET N-CH 1200V 600MA TO263
part Number：
IXTA06N120P
Alternative Model：
IXTA06N120P-TRL , LTC3128IFE#PBF , IXTA08N120P , T598D157M016ATE065 , SIHB24N80AE-GE3 , IXTT6N120 , FQP3P50 , G3R350MT12D , STH3N150-2 , IXTY1R4N120PHV , AXK5S40347YG , PH9455.356NL , TLV271CS-13 , HMC608LC4 , CY8C4125AZI-483 , IXTA06N120P-TRL
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 1200V 600MA TO263
RoHS：
YES
IXTA06N120P specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds：
270 pF @ 25 V
Drain to Source Voltage (Vdss)：
1200 V
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Supplier Device Package：
TO-263AA
Power Dissipation (Max)：
42W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
13.3 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
600mA (Tc)
Rds On (Max) @ Id, Vgs：
32Ohm @ 300mA, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1992
quantity
unit price
International prices
1
4.91
4.91
50
3.89
194.5
100
3.33
333
500
2.96
1480
1000
2.54
2540
2000
2.39
4780
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