IXFT9N80Q
MOSFET N-CH 800V 9A TO268
part Number：
IXFT9N80Q
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 800V 9A TO268
RoHS：
YES
IXFT9N80Q specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs：
56 nC @ 10 V
Vgs(th) (Max) @ Id：
5V @ 2.5mA
Current - Continuous Drain (Id) @ 25°C：
9A (Tc)
Drain to Source Voltage (Vdss)：
800 V
Power Dissipation (Max)：
180W (Tc)
Package / Case：
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：
TO-268AA
Input Capacitance (Ciss) (Max) @ Vds：
2200 pF @ 25 V
Rds On (Max) @ Id, Vgs：
1.1Ohm @ 500mA, 10V
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Quick inquiry
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Standard Pack Quantity：1600
quantity
unit price
International prices
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