IPI25N06S3L-22
MOSFET N-CH 55V 25A TO262-3
IPI25N06S3L-22 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
55 V
Power Dissipation (Max)：
50W (Tc)
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C：
25A (Tc)
Vgs(th) (Max) @ Id：
2.2V @ 20µA
Drive Voltage (Max Rds On, Min Rds On)：
5V, 10V
Vgs (Max)：
±16V
Supplier Device Package：
PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs：
47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2260 pF @ 25 V
Rds On (Max) @ Id, Vgs：
21.6mOhm @ 17A, 10V
