IPI25N06S3-25
MOSFET N-CH 55V 25A TO262-3
IPI25N06S3-25 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
55 V
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C：
25A (Tc)
Supplier Device Package：
PG-TO262-3
Power Dissipation (Max)：
48W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
41 nC @ 10 V
Vgs(th) (Max) @ Id：
4V @ 20µA
Input Capacitance (Ciss) (Max) @ Vds：
1862 pF @ 25 V
Rds On (Max) @ Id, Vgs：
25.1mOhm @ 15A, 10V
