FQPF9P25YDTU
MOSFET P-CH 250V 6A TO220F-3
FQPF9P25YDTU Specifications
Mounting Type：
Through Hole
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
250 V
Vgs(th) (Max) @ Id：
5V @ 250µA
Power Dissipation (Max)：
50W (Tc)
Current - Continuous Drain (Id) @ 25°C：
6A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1180 pF @ 25 V
Package / Case：
TO-220-3 Full Pack, Formed Leads
Supplier Device Package：
TO-220F-3 (Y-Forming)
Rds On (Max) @ Id, Vgs：
620mOhm @ 3A, 10V
